JPS50116274A - - Google Patents
Info
- Publication number
- JPS50116274A JPS50116274A JP2313674A JP2313674A JPS50116274A JP S50116274 A JPS50116274 A JP S50116274A JP 2313674 A JP2313674 A JP 2313674A JP 2313674 A JP2313674 A JP 2313674A JP S50116274 A JPS50116274 A JP S50116274A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2313674A JPS50116274A (en]) | 1974-02-27 | 1974-02-27 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2313674A JPS50116274A (en]) | 1974-02-27 | 1974-02-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS50116274A true JPS50116274A (en]) | 1975-09-11 |
Family
ID=12102114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2313674A Pending JPS50116274A (en]) | 1974-02-27 | 1974-02-27 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS50116274A (en]) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5370668A (en) * | 1976-12-06 | 1978-06-23 | Ibm | Method of forming nntype region in silicon substrate |
JP2023122664A (ja) * | 2022-02-24 | 2023-09-05 | 三菱電機株式会社 | パワー半導体装置およびパワー半導体装置の製造方法 |
JP2023168694A (ja) * | 2022-05-16 | 2023-11-29 | 三菱電機株式会社 | パワー半導体装置およびパワー半導体装置の製造方法 |
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1974
- 1974-02-27 JP JP2313674A patent/JPS50116274A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5370668A (en) * | 1976-12-06 | 1978-06-23 | Ibm | Method of forming nntype region in silicon substrate |
JP2023122664A (ja) * | 2022-02-24 | 2023-09-05 | 三菱電機株式会社 | パワー半導体装置およびパワー半導体装置の製造方法 |
JP2023168694A (ja) * | 2022-05-16 | 2023-11-29 | 三菱電機株式会社 | パワー半導体装置およびパワー半導体装置の製造方法 |